Very High Inductance Power

The CWS' HIPC Series of Very High Inductance Choke / Very High Power Inductor provides up to 30 milli-hendries (30 mH) of inductance and handles up to 100 Amperes and are designed using solid heavy gauge magnet wires winding to achieve lower DC resistance (DCR), and high inductance. The core materials used are large diameter distributed air gaps compacted iron powder Pot Cores.

The HIPC Series of Very High Power Inductor / Very High Inductance Inductor are capable of handling high DC bias current up to 100 Amps, high energy storage and high voltage swing due to higher mass and higher saturation flux densities of the cores used.

The table below shows the types of cores used in each of the part number. The HIPC Series are constructed using Iron Powder, Silicon Iron or Sendust cores and are suitable for swinging chokes, energy storage filter inductor in SMPS with high ripple current, AC Inductor, in-line noise filters with large AC voltage swing, unidirectional drive application such as pulse transformer and flyback transformer.

The HIPC Series Pot Cores are from Micrometals's #26 materials (Iron Powder), Micrometal's Super-MSS (Sendust) and Micrometal's FluxSan (Silicon Iron). The Silicon Iron version is suitable for those application requiring small inductance drop when a high DC current (DC bias) is flowing into the inductor. The Sendust version is suitable for energy storage inductors. The Iron Powder version is suitable for Output Ripple filtering, High Power Output Chokes and High Inductance Inductor where a good DC bias characteristics is desired. The core loss of the Sendust and Silicon Iron are very similar at frequency below 300 Khz. Silicon Iron version cost a little more than the others. The Silicon Iron cores are not suitable for application over 750 Khz, and has a much higher core loss than the Sendust cores.

The part PDF drawing has the DC Bias Current versus Inductance table. It is not necessary that inductor with higher Inductance versus DC Bias Current is better in all cases. This is because Energy Storage in a filter is defined as 1/2 x [L] x [Sq I], where [L] is the inductance and [Sq I] is the square of the current flowing into the inductor. For energy storage filtering application, having a good DC bias is not always a desired feature. When the current flow into the inductor increases, the amount of energy stored increased to the square of the current [Sq I], and if the inductance [L] does not drop when the current increase, the energy stored maybe too high and could potentially cause a circuit to blow up. For such energy storage filtering application such as Input Filter ( Phi or butterworth or chebyshev filters), or the Boost Inductor, the HIPC Series using Sendust is usually the desired choice. However, every application is different and the design engineer must balance the trade offs.